Use of pedestals to fabricate contact openings

摘要

Nonvolatile memory wordlines ( 160 ) are formed as sidewall spacers on sidewalls of control gate structures ( 280 ). Each control gate structure may contain floating and control gates ( 120, 140 ), or some other elements. Pedestals ( 340 ) are formed adjacent to the control gate structures before the conductive layer ( 160 ) for the wordlines is deposited. The pedestals will facilitate formation of the contact openings ( 330.1 ) that will be etched in an overlying dielectric ( 310 ) to form contacts to the wordlines. The pedestals can be dummy structures. A pedestal can physically contact two wordlines.