| 摘要 |
<p>A transflective TFT(thin film transistor) substrate is provided to control wavelength dependency by adjusting the thickness of polysilicon. A gate line and a data line cross each other to define a sub pixel region. A TFT has a polysilicon-type first active layer(80a), connected to the gate line and the data line. A pixel electrode(60) is formed in the sub pixel region, connected to the TFT. A second active layer(80b) is formed in the sub pixel region to transmit/reflect light, overlapping the pixel electrode. An ARC(anti-reflective coating) is formed to cover the second active layer. A gate insulation layer can be formed between the first active layer of the TFT and a gate electrode of the TFT. First and second interlayer dielectrics(16,18) are formed between source and drain electrodes(44,46) of the TFT and the gate electrode of the TFT. A pixel hole(36) penetrates the gate insulation layer and the first interlayer dielectric to expose the second active layer.</p> |
