发明名称 ION DOPING APPARATUS
摘要 An ion doping apparatus is provided to check and correct ion doping ununiformity caused by an abnormal scan speed by subdividing the scan sections of a substrate scanned by electron beams, by measuring a scan speed in every scan section and by feeding back the measured scan speed to a transfer apparatus. A gas injecting unit(200) injects reaction gas(210). An ion generating unit(300) reacts with the reaction gas to generate ions(310). An electron beam generating unit(400) separates the ions according to their mass to generate electron beams(410). A substrate(10) into which the ions are doped from the electron beam is supported by a support plate(500). A transfer apparatus(600) transfers the substrate in a manner that the substrate is scanned by the electron beam, coupled to the support plate. A speed control unit(700) divides the scan section of the substrate into a plurality of scan sections and measures the scan speed in every scan section to feed back the measured scan speed to the transfer apparatus, connected to the transfer apparatus. A guide part(550) guides the support plate along the progression direction of the substrate.
申请公布号 KR20070117029(A) 申请公布日期 2007.12.12
申请号 KR20060050679 申请日期 2006.06.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DEOK HOI;YI, CHUNG
分类号 H01L21/265 主分类号 H01L21/265
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