NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An NVM(non-volatile memory) device is provided to reduce an interference phenomenon between floating gate patterns by preventing a dielectric layer with a high dielectric constant from being interposed between the floating gate patterns. Isolation layer patterns(108) protrude from the surface of a substrate(100). Spacers(114) are formed on the sidewall of a protruding portion from the isolation layer patterns to the surface of the substrate. A tunnel oxide layer pattern(116) is formed on the substrate positioned between the spacers. A floating gate pattern(120a) is formed on the tunnel oxide layer pattern to come in contact with the sidewall of the spacer wherein the width of the floating gate pattern increase as it goes upward. A dielectric layer pattern(122a) is formed on the isolation layer pattern and the floating gate pattern. A control gate pattern(124a) is formed on the dielectric layer pattern. The upper surface of the floating gate pattern can be lower than the upper surface of the isolation layer pattern.