| 摘要 |
A plasma-etching apparatus and a chamber cleaning method using the same are provided to maximize cleaning efficiency by evenly forming plasma in the inside of a chamber as high frequency power more than 60MHz is authorized in up and down parts of a electrode at the same time. A plasma-etching apparatus comprises a chamber(10), top and bottom electrodes(13,14), a radio frequency power(41), and a controller. In the chamber, an etching process of a substrate using plasma is made. The top and bottom electrode are arranged within the chamber. At the same time, the radio frequency power authorizes high frequency power to the top and bottom electrode. The controller controls the power fraction of the high frequency power applied to the top and bottom electrode at the same time. The controller controls plasma distribution for washing the inside of the chamber.
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