发明名称 |
TECHNIQUES FOR DETECTING WAFER CHARGING IN A PLASMA PROCESSING SYSTEM |
摘要 |
Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
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申请公布号 |
US2008314731(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070767730 |
申请日期 |
2007.06.25 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES INC. |
发明人 |
WALTHER STEVEN R.;KOO BON-WOONG;LINDSAY BERNARD GREGORY |
分类号 |
H05F3/00;B05C11/00 |
主分类号 |
H05F3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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