| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact and a sputtering target having a low bulk resistance and a high density, and a transparent amorphous oxide semiconductor film wherein a metal thin film can be etched selectively. <P>SOLUTION: The oxide sintered compact contains a spinel compound represented by an AB<SB>2</SB>O<SB>4</SB>-type compound composed of zinc oxide, gallium oxide and tin oxide, and having a lattice constant which is a middle one between the lattice constant of a spinel compound represented by ZnGa<SB>2</SB>O<SB>4</SB>and the lattice constant of a spinel compound represented by Zn<SB>2</SB>SnO<SB>4</SB>. <P>COPYRIGHT: (C)2010,JPO&INPIT |
