| 发明名称 |
FILM FORMING METHOD |
| 摘要 |
Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) in a processing container. The method includes an adsorption step of supplying a precursor gas including a silicon-containing gas into the processing container, and adsorbing a molecule of the precursor gas onto a surface of the processing target substrate, and a reaction step of supplying a reaction gas including a nitrogen- and hydrogen-containing gas while supplying microwaves from an antenna to generate plasma of the reaction gas just above the processing target substrate, and performing a plasma processing, by the generated plasma, on a surface of the substrate to be processed on which the molecule of the precursor gas has been adsorbed. |
| 申请公布号 |
US2016172183(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514967751 |
申请日期 |
2015.12.14 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Kamada Toyohiro;Fukiage Noriaki;Karakawa Takayuki |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a nitride film on a substrate to be processed (“processing target substrate”) in a processing container, the method comprising:
an adsorption step of supplying a precursor gas including a silicon-containing gas into the processing container, and adsorbing a molecule of the precursor gas onto a surface of the processing target substrate, and a reaction step of supplying a reaction gas including a nitrogen- and hydrogen-containing gas while supplying microwaves from an antenna to generate plasma of the reaction gas just above the processing target substrate, and performing a plasma processing, by the generated plasma, on a surface of the processing target substrate on which the molecule of the precursor gas is adsorbed. |
| 地址 |
Tokyo JP |
