发明名称 HORIZONTAL ELECTRIC FIELD-TYPE THIN FILM TRANSISTOR SUBSTRATE
摘要 PURPOSE: A horizontal electric field-type TFT substrate is provided to inject a liquid crystal material between an upper substrate and a lower substrate, and to apply an electric field to the liquid crystal material, then to change orientation of the liquid crystal material, thereby inducing a change of a light polarized state. CONSTITUTION: Gate wires(121,123,125) and reference electrode wires are formed on an insulating substrate. The reference electrode wires include the first and second reference electrode lines(131a,131b), a reference electrode(133), and plural connection portions(132). On the reference electrode wires(131a,131b,132) except the gate wires(121,123,125) and the reference electrode(133), a gate insulating layer is formed. A semiconductor layer(154) is deposited on the gate insulating layer. Resistive contact layers(161) are formed on the semiconductor layer(154). Data lines(171) are extended on the resistive contact layers(161) in vertical direction, and source electrodes(173) are deposited on the data lines(171). A protective layer is deposited on the data lines(171) with contact holes(181,183). Pixel electrodes and the reference electrode(133) are deposited on the protective layer.
申请公布号 KR20040036822(A) 申请公布日期 2004.05.03
申请号 KR20020065491 申请日期 2002.10.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG GYU
分类号 G02F1/1343 主分类号 G02F1/1343
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