发明名称 |
LOW DIELECTRIC DISSIPATION MATERIAL AND METHOD OF CONTROLLING DIELECTRIC DISSIPATION FACTOR OF SILICON CARBIDE SINTERED COMPACT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low dielectric dissipation material having high corrosion resistance and relatively low dielectric dissipation factor and to control the dielectric dissipation factor of a silicon carbide sintered compact. <P>SOLUTION: The low dielectric dissipation material is constituted so that the dielectric dissipation factor of the sintered compact is controlled by controlling the quantity of boron nitride to be blended in raw material powder forming the silicon carbide sintered compact by sintering. The quantity of boron nitride to be blended in the silicon carbide raw material powder is controlled to ≥1.0 wt.%. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004131298(A) |
申请公布日期 |
2004.04.30 |
申请号 |
JP20020237008 |
申请日期 |
2002.08.15 |
申请人 |
NGK INSULATORS LTD |
发明人 |
FURUKUBO HIROSHI;ODA TOSHIO;KOBAYASHI HIROMICHI;OHASHI HARUAKI;IHARA CHIKAFUMI |
分类号 |
C04B35/565 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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