| 摘要 |
A light emitting diode according to one embodiment comprises: a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are on the substrate; a first pad electrode part on the first conductive semiconductor layer; a current blocking layer on the second conductive semiconductor layer; a second electrode on the first conductive semiconductor layer and the current blocking layer; and a second pad electrode part on the second electrode, wherein the width of the current blocking layer can become thicker as the current blocking layer becomes closer to the first pad electrode part from the second pad electrode part. |
