| 摘要 |
PROBLEM TO BE SOLVED: To achieve favorable noise reduction effect of a high-frequency power source.SOLUTION: A layered semiconductor device comprises a plurality of integrated circuit chips 2 layered on a substrate 1. Each of power supply target chips 2B-2D out of the plurality of integrated circuit chips includes a power source terminal 3 and a ground terminal 4 which are respectively connected to decoupling power source-side through electrode wiring 5 and decoupling ground-side through electrode wiring 6, in which the decoupling power source-side through electrode wiring and the decoupling ground-side through electrode wiring compose a decoupling through electrode transmission line 7. The layered semiconductor device further comprises resistance 8 and capacitance 9 which are equivalent with characteristic impedance of the decoupling through electrode transmission line and series connected on the integrated circuit chip located at a dead end of the decoupling through electrode transmission line.SELECTED DRAWING: Figure 1 |
