发明名称 Semiconductor device and manufacturing method thereof
摘要 A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
申请公布号 US9429807(B2) 申请公布日期 2016.08.30
申请号 US201514721482 申请日期 2015.05.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei
分类号 G02F1/1368;H01L25/18;H01L29/786;G02F1/1335;G02F1/1343;H01L33/00;G02F1/1333;G02F1/1337;G02F1/1339;G02F1/1362;H01L27/12 主分类号 G02F1/1368
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A semiconductor device comprising: a first conductive film on a substrate; an IC chip whose first electrode is connected to the first conductive film through a conductive particle; a second conductive film connected to a second electrode of the IC chip through a conductive particle; and an FPC connected to the second conductive film through a conductive particle, wherein the first conductive film comprises a region overlapping with a sealing material.
地址 Kanagawa-ken JP
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