发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics. |
申请公布号 |
US9429807(B2) |
申请公布日期 |
2016.08.30 |
申请号 |
US201514721482 |
申请日期 |
2015.05.26 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei |
分类号 |
G02F1/1368;H01L25/18;H01L29/786;G02F1/1335;G02F1/1343;H01L33/00;G02F1/1333;G02F1/1337;G02F1/1339;G02F1/1362;H01L27/12 |
主分类号 |
G02F1/1368 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A semiconductor device comprising:
a first conductive film on a substrate; an IC chip whose first electrode is connected to the first conductive film through a conductive particle; a second conductive film connected to a second electrode of the IC chip through a conductive particle; and an FPC connected to the second conductive film through a conductive particle, wherein the first conductive film comprises a region overlapping with a sealing material. |
地址 |
Kanagawa-ken JP |