Liquid discharging apparatus, head unit, capacitive load driving circuit, and integrated circuit device for capacitive load driving

摘要

There is provided a liquid discharging apparatus including: a low voltage system circuit block including a modulation portion which generates a modulation signal pulse-modulated from a source signal; a high voltage system circuit block including a gate driver which generates an amplification control signal based on the modulation signal; a transistor which generates an amplification modulation signal amplified from the modulation signal based on the amplification control signal; a low pass filter which demodulates the amplification modulation signal and generates a driving signal; and a piezoelectric element which is displaced as the driving signal is applied, in which the low voltage system circuit block and the high voltage system circuit block are formed on the same semiconductor substrate, in which the semiconductor substrate has one substrate potential supply terminal to which a substrate potential of the semiconductor substrate is supplied.

主权项

1. A liquid discharging apparatus comprising:
a low voltage system circuit block including a modulation portion which generates a modulation signal pulse-modulated from a source signal; a high voltage system circuit block including a gate driver which generates an amplification control signal based on the modulation signal; a transistor which generates an amplification modulation signal amplified from the modulation signal based on the amplification control signal; a low pass filter which demodulates the amplification modulation signal and generates a driving signal; a piezoelectric element which is displaced as the driving signal is applied; a cavity in which the inside is filled with liquid and the internal volume changes due to the displacement of the piezoelectric element; and a nozzle which communicates with the cavity, and discharges the liquid inside the cavity as liquid droplets in accordance with the change in the internal volume of the cavity, wherein the low voltage system circuit block and the high voltage system circuit block are formed on the same semiconductor substrate, wherein the semiconductor substrate has one substrate potential supply terminal to which a substrate potential of the semiconductor substrate is supplied, and wherein, in a plan view, the shortest straight path between the substrate potential supply terminal and the low voltage system circuit block does not intersect the high voltage system circuit block, and the shortest straight path between the substrate potential supply terminal and the high voltage system circuit block does not intersect the low voltage system circuit block.