SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD FOR SAME

摘要

The light-emitting layer of the present invention comprises a base layer having a composition that is subjected to stress distortion from a first semiconductor layer, and having a plurality of base segments that are formed in a random mesh shape, and a quantum well structure layer comprising at least one barrier layer and at least one quantum well layer formed on the base layer. The base layer has a first sub-base layer, a trench that divides the first sub-base layer into a plurality of base segments, and a second sub-base layer that is formed by burying the first sub-base layer.