Rapid heat treatment of a semiconductor multi-layer crowned wafer with local and selective adaptation of the heating to take account of local differences in heat absorption

摘要

The rapid heat treatment of a multi-layer crowned wafer (10), made of semiconductor materials, is characterized in that during the annealing the heating is locally and selectively adapted at the level of the crown in order to take account of the local difference in heat absorption An Independent claim is also included for a thermal continuity structure destined to be used in the heat treatment method, in which the dimensions of the structure are adapted to help establish on the wafer a crown temperature essentially equivalent to that of the rest of the wafer surface.