| 摘要 |
In the present invention, a semiconductor ultraviolet light-emitting element is provided with an n-type nitride semiconductor layer, a light-emitting layer comprising a nitride semiconductor, and a p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a p-type conductive layer (5) that is disposed on the far side of the light-emitting layer when viewed from the n-type nitride semiconductor layer and that has a band gap larger than that of the light-emitting layer, and a p-type contact portion that is disposed on the far side of the p-type conductive layer when viewed from the light-emitting layer, has a band gap smaller than that of the light-emitting layer and is in contact with a p-electrode. The p-type contact portion comprises dot-shaped p-type contacts or a p-type contact layer with holes, and a non-covered region is formed on one surface of the p-type conductive layer. 70% or more of the non-covered region is a region in which the value of either the spacing between the p-type contacts or the hole diameter, divided by the thickness of the p-type conductive layer, is 3.0 or less. |
