FIELD EFFECT TRANSISTOR AND METHOD OF MAKING

摘要

A method of fabricating a FET includes forming a gate on the surface of a substrate. A trench contact extends between a first region located proximate the surface of the substrate and a second region located below the first region is formed in the surface. The surface of the substrate is coated with a conductive material, wherein the conductive material at least partially covers the gate and lines the trench contact to electrically connect the first region and the second region. A void remains in the trench contact. A dielectric material is applied to the conductive material, wherein the dielectric material at least partially fills the void in the trench contact. At least a portion of the conductive material is etched from the gate.

主权项

1. A field effect transistor (FET) comprising:
a trench contact; a conductive material lining at least a portion of the trench contact; a first region and a second region located proximate the trench contact and electrically coupled by way of the conductive material lining at least a portion of the trench contact; a gate, wherein the conductive material has been etched from at least a portion of the gate; and a dielectric material at least partially filling the trench contact, the dielectric material being resilient to an etching material applied to the conductive material.