| 摘要 |
PURPOSE:To obtain light emission of long wavelength with strong intensity by obtaining the light emission in a mechanism that bipolar moment is generated in the process of running electrons. CONSTITUTION:The first carrier enclosure layer B1, the first carrier running layer A1, a barrier layer C, the second carrier running layer A2, the second carrier enclosure layer B2 are sequentially laminated in this order, the first and second regions of the layer A2 are respectively connected to the first and second electrodes E1, E2, and the layer C is composed to have a thickness which brings the carriers to be bonded between the layers A1 and A2. When a DC power source is connected with the electrode E1 side as negative between the electrodes E1 and E2, electrons are introduced from the electrode E1 through a semiconductor region D1 into the layer A2 to run toward the semiconductor region D2, repetitive runs to the A1 are then performed, bipolar moment having vertical direction to the layer A2 is generated, and generated without being limited by Auger effect. |
