| 摘要 |
PURPOSE:To improve an S/N ratio as an optical sensor, by determining the including amount of hydrogen in a thin film semiconductor layer in the range of a specified atom ratio with respect to a photovoltaic element, which is formed as laminated thin film semiconductors by repeated depositions, and decreasing a dark current. CONSTITUTION:In a PIN type photovoltaic element using silicon thin film semiconductors, the following structures are provided for P-type layers and/or N-type layers: a structure (P-type laminated thin film semiconductor), wherein P-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom ; and/or a structure (N-type laminated thin film semiconductor), wherein N-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom . The including amount of hydrogen atoms in each film is made to be 1 atom ratio or more and 10 atom ratio or less. On a substrate 1, on which Ag is evaporated, the N-type layers 2 and the I-type layers 3 are laminated three times so that each layer has a thickness of 50Angstrom . Thus an N-type laminated thin film semiconductor is formed. An I-type layer 4 is deposited. Then, the P-type layers 5 and the I-type layers 6 are laminated three times so that each layer has a thickness of 50Angstrom . Thus a P-type laminated thin film semiconductor is formed. Finally, a transparent conductor layer of an ITO thin film and a current collecting electrode are formed. |
