| 摘要 |
<p>PURPOSE:To reduce the electric power consumption at the time of precharging by bisecting a memory section by address element groups and connecting the memory sections to a precharge circuit respectively via transfer gates which make inversion operations. CONSTITUTION:The semiconductor memory section 10 is bisected by the address element groups 40, 50. These bisected memory sections 10 are respectively connected to the precharge circuit 30 via the transfer gates 60, 70 which make the inversion operations with each other. Consequently, the parasitic capacity at the time of precharging deceases and the electric power consumption at the time of the precharging is drastically reduced as compared with the case the memory circuit is not divided.</p> |
