发明名称 SHORT CIRCUIT DETECTOR CIRCUIT FOR MEMORY ARRAYS
摘要 A method for detecting voltage supply short circuits in integrated circuits and a circuit for implementing that method is disclosed. Entire rows of memory cells in an SRAM are coupled to a single sense line. The sense line to each row is activated individually. The sense lines are in turn coupled to a current sensing circuit. If a short exists on any memory cell in a given row, the current sensing circuit generates a low output, indicating a short circuit. <IMAGE>
申请公布号 US5181205(A) 申请公布日期 1993.01.19
申请号 US19900507692 申请日期 1990.04.10
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 KERTIS, ROBERT A.
分类号 G11C11/413;G11C11/417;G11C29/00;G11C29/04;G11C29/50;H01L27/10 主分类号 G11C11/413
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