发明名称 |
SHORT CIRCUIT DETECTOR CIRCUIT FOR MEMORY ARRAYS |
摘要 |
A method for detecting voltage supply short circuits in integrated circuits and a circuit for implementing that method is disclosed. Entire rows of memory cells in an SRAM are coupled to a single sense line. The sense line to each row is activated individually. The sense lines are in turn coupled to a current sensing circuit. If a short exists on any memory cell in a given row, the current sensing circuit generates a low output, indicating a short circuit. <IMAGE> |
申请公布号 |
US5181205(A) |
申请公布日期 |
1993.01.19 |
申请号 |
US19900507692 |
申请日期 |
1990.04.10 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KERTIS, ROBERT A. |
分类号 |
G11C11/413;G11C11/417;G11C29/00;G11C29/04;G11C29/50;H01L27/10 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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