| 摘要 |
<p>PURPOSE:To provide a nonvolatile memory timer circuit in which timer duration is arbitrary set during selection time for every wafer condition chip or during a last selection time and the timer duration is automatically adjusted against temperature variation. CONSTITUTION:Capacitors Tc1 to Tc4 which are connected in parallel against a large capacitor Tc0 are switched in accordance with the program contents of nonvolatile memory cells M1 to M4 to perform a minute adjustment. Thus, the charging discharging time constant which decides the time duration is decided. Moreover, in accordance with the detected temperature by temperature monitoring circuit 261 to 264, MOS transistors TH1 to THIO of charging.discharging paths are switched, the resistance value is minutely adjusted and the charging.discharging time constant is decided corresponding to the temperature.</p> |
