| 摘要 |
PURPOSE: To provide a method of forming a metal silicide layer for conduction use on feature materials arranged closely to each other. CONSTITUTION: A method of manufacturing a semiconductor integrated circuit consists of a step for forming a plurality of feature materials 3, which are separately arranged, on a substrate 1, a step, in which a polysilicon layer 7 is formed on the surfaces of the materials 3 and a first conductive material layer is deposited on the layer 7 in a non-isotropic manner, a step, in which the first conductive material layer is etched to remain metal fins 11, a step for depositing a second conductive material layer 13 on a structure formed by the above step and a step for forming a conductive compound layer by heating the structure formed by the above step.
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