| 摘要 |
PURPOSE:To provide a semiconductor substrate treatment which suppresses the generation of small defects and oxygen deposit which are to be the cause of element characteristic deterioration. CONSTITUTION:A silicon substrate process has a process of heat treating a silicon substrate in a gas atmosphere. The heat treatment is performed in a non-oxidizing atmosphere at 1100 deg.C or above, and the heat treatment temperature and the heat treatment time of a heating process before heat treatment are permitted to be in an area under a line that connects the following four points on a plane with heat treatment temperature and heat treatment time as the coordinates; (900 deg.C, 4min), (800 deg.C, 40min), (700 deg.C, 11hr) and (600 deg.C, 320hr).
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