Blue light-emitting semiconductor diode contg. Gp.IIIA nitride layers - incorporates zinc-doped semi-insulating layer with impurity concn. of 10 to power 19 to 21 atoms per cubic centimetre

摘要

On a monocrystalline sapphire substrate (1) a 50 nm thick AlN buffer layer (2) is overlaid successively with a 2.2.-micron n+ GaN layer (3), a 1.5-micron layer (4) of lower charge concn., about 40 nm of intrinsic GaN:Zn (6) and a 0.2-micron p-layer (5). Al electrodes (7,8) are superimposed and isolated from each other by an incision (9). The device is mfd. by metal-organic vapour phase epitaxy. Pref. charge concns. in the n-type layers (3,4) are 10 to the power 17 to 19, and 10 to the power 14 to 17/cubic centimetre respectively to satisfy luminescence efficiency, crystalline quality and heat-generating series resistance criteria. ADVANTAGE - Intrinsic nitride layer increases long-wavelength component and intensity of blue emission.