Semiconductor member having an SOI structure

摘要

A semiconductor member is disclosed having a non-porous monocrystalline semiconductor region arranged on a region constituted of an insulating substance, wherein the difference between the maximum value and the minimum value of the thickness of said non-porous silicon monocrystalline semiconductor region is 10 % or less based on said maximum value. Further, the dislocation defect density in said non-porous silicon moncrystalline semiconductor may be 2.0 x 10<4>/cm<2> or less, and the lifetime of carriers may be 5.0 x 10<-><4> sec or longer. <MATH>