Photodetector with improved response, matrix sensor comprising a plurality of such photodetectors

摘要

The light detector device has a photodiode (PD) with a junction capacitance (Cj) which is initially precharged with a reverse bias. A control logic (LC) regulates the operation of switches to vary the exposure time, by altering the electronic circuit configuration to vary the rate of change of the output voltage (Vout) as a function of the illumination in the first phase. A semiconductor varies the initial bias (Vref, VNwell) so as to vary the output voltage as a function of illumination in the second phase. The acquisition uses an amplifier (AO) with feedback capacitor (C) which can be selectively short-circuited by a controlled switch (Ireset). The matrix comprises 32 columns and 32 lines, each associated with an acquisition circuit and column address, to produce voltages which are converted into currents by a MOS transistor, to increase the sweep rate. The currents are then converted back to voltages.