发明名称 Verfahren zum Herstellen von elektronischen Elementen
摘要 The manufacturing method uses a semiconductor wafer with active regions (2) for the electronic elements (1) formed in its front surface, together with spaced separation regions, for dividing the electronic components from one another. A conductive contact layer (7) applied to the front surface is structured to provide contact terminals (9) across at least part of the cross-section of the separation regions, before etching the rear surface of the semiconductor wafer at the separation regions, for separating the contact terminals associated with the different electronic elements.
申请公布号 DE19707887(A1) 申请公布日期 1998.09.10
申请号 DE1997107887 申请日期 1997.02.27
申请人 MICRONAS SEMICONDUCTOR HOLDING AG, ZUERICH, CH 发明人 IGEL, GUENTER, DIPL.-ING., 79331 TENINGEN, DE;MALL, MARTIN, DIPL.-PHYS. DR., 79100 FREIBURG, DE
分类号 H01L21/301;H01L21/60;H01L23/485;(IPC1-7):H01L21/78 主分类号 H01L21/301
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