发明名称 METHOD OF FORMING CONDUCTOR, GROOVE WIRING AND CONTACT
摘要 PROBLEM TO BE SOLVED: To realize a method of forming a groove wiring, having a desired wiring pattern without being affected by the shape of a base layer, the recess and protrusion of the surface or film quality by reducing the dispersion of the thickness of groove wiring and an insulation film in the surface of a wafer. SOLUTION: This method, wherein an insulation film is formed on a base layer in which regions varying in at least in film quality or shape are mixed on a plane, then a groove wiring is formed on the insulation film includes a step of forming an antireflection film 40 on the insulation film 28, a step of forming an etching mask 42 for forming a wiring groove for forming groove wiring on the film 40 by patterning a photoresist film 42 on the film 40 and etching the film 40 and the insulation film, a step of forming the wiring groove on the insulation film by etching of the film 40 and the insulation film by using the mask 42, a step of embedding a barrier metal layer 22 and a wiring layer in the wiring groove, a step of polishing and removing the layer 22 and the wiring layer, and a step of removing the film 40 together with the residual layer 22.
申请公布号 JP2000183165(A) 申请公布日期 2000.06.30
申请号 JP19980360705 申请日期 1998.12.18
申请人 NEC CORP 发明人 ICHIKAWA TOSHIHIKO
分类号 H01L21/76;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L21/76
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