发明名称 METHOD AND APPARATUS FOR VACUUM TREATMENT
摘要 <p>PROBLEM TO BE SOLVED: To solve such a problem that a workpiece to be treated is hardly controlled to an aimed temperature, because the temperature stability of the workpiece is inadequate in low pressure in the case of helium gas, though the thermal conductivity has to be limited by means of lowering a pressure of helium gas, when helium gas is employed as a back gas for vacuum treatment in high temperature. SOLUTION: The method for vacuum treatment comprises steps of separately controlling flow rates of He gas having high thermal conductivity and Ar gas having low thermal conductivity, separately detecting pressures of both these gases after the flow control, and controlling feeding of the gases based on the flow rates and the pressure of both the gases.</p>
申请公布号 JP2002327275(A) 申请公布日期 2002.11.15
申请号 JP20010135012 申请日期 2001.05.02
申请人 TOKYO ELECTRON LTD 发明人 TOMOYOSHI TSUTOMU
分类号 B01J3/00;B01J3/02;C23C16/46;H01L21/00;H01L21/302;H01L21/3065;H01L21/31;H01L21/683;H01L21/687;(IPC1-7):C23C16/46;H01L21/306;H01L21/68 主分类号 B01J3/00
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