| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device that is high in efficiency and reliability. <P>SOLUTION: The photoelectric conversion device is provided with a photoactive layer containing an amorphous silicon film which is≥0.98 in the ratio of the existing density of Si-H coupled states to the sum of the existing densities of Si-H coupled states and Si-H<SB>2</SB>coupled states. In addition, the amorphous silicon film contains one or more kinds of group IV-VI elements. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
