| 摘要 |
<P>PROBLEM TO BE SOLVED: To carry out treatment only for a processing point of an object to be processed with superior productivity at a low cost by a stable, efficient and simple constitution and control. <P>SOLUTION: This is a plasma processing method in which a first inert gas 15 is supplied to a reaction space 11 installed at a plasma head 10, in which a primary plasma 16 is made to be blown out from the reaction space 11 by applying a high frequency electric field, in which a mixed gas region 20 where an appropriate amount of a reaction gas is mixed mainly using secondary inert gas is formed in the plasma head 10 or in the vicinity thereof, in which a secondary plasma 21 is generated by colliding the primary plasma 16 with this mixed gas region 20, and in which the treatment is carried out by spraying the generated secondary plasma 21 to the processing point of the object to be processed 5, and when treating the processing point by relatively moving the plasma head 10 and the object to be processed 5, the primary plasma 16 is continuously generated, and the mixed gas region 20 is formed only at the processing point so as to generate the secondary plasma 21. <P>COPYRIGHT: (C)2008,JPO&INPIT |
