| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to prevent the back drift of a dopant in a p-type semiconductor layer to an active layer by forming a supper lattice layer on the active layer. An n-type semiconductor layer(120) is formed on a substrate(105). An active layer(125) is formed over the n-type semiconductor layer. An LD(Low Doped) p-type semiconductor layer and an un-doped semiconductor layer are alternatively laminated to form a super lattice layer(130) over the active layer. A p-type semiconductor layer(140) is formed on the super lattice layer. The un-doped semiconductor layer of the super lattice layer is alternatively laminated with a super lattice structure under the temperature change of 500 ‹C to 1000 ‹C. The supper lattice layer has an amorphous shape. The un-doped semiconductor layer of the supper lattice layer is Um-GaN layer.
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