| 摘要 |
A semiconductor light emitting device and a method for manufacturing the same are provided to reflect light generated from an active layer with various critical angles by forming a wide reflection area and an unevenness structure on a bottom of a substrate for implementing the various critical angles. A buffer layer is formed on a substrate(S100). An n-type semiconductor layer is formed over the buffer layer(S110). An active layer is formed over the n-type semiconductor layer(S120). A p-type semiconductor layer and a transparent electrode layer are sequentially formed over the active layer(S130,S140). An etching process is performed to a part of the n-type semiconductor layer and then a p-type electrode and an n-type electrode are grown(S150). A lapping process is performed to form an unevenness structure on a bottom of the substrate. A polishing process is performed on the resultant structure(S160). A reflective layer is formed under the unevenness structure(S170).
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