发明名称 |
Integrated passive devices with high Q inductors |
摘要 |
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor. |
申请公布号 |
EP1901353(A2) |
申请公布日期 |
2008.03.19 |
申请号 |
EP20070253552 |
申请日期 |
2007.09.07 |
申请人 |
SYCHIP INC. |
发明人 |
DEGANI, YINON;CHEN, YINCHAO;FAN, YU;GAO, CHARLEY CHUNLEI;SUN, KUNQUAN;SUN, LIQUO |
分类号 |
H01F17/00;H01L23/64;H01L25/065 |
主分类号 |
H01F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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