发明名称 |
Reflection plate for semiconductor heat treatment and manufacturing method thereof |
摘要 |
<p>It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 µm, said at least one side 2a formed grooves 2c therein.
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申请公布号 |
EP1349200(A3) |
申请公布日期 |
2009.01.07 |
申请号 |
EP20030006821 |
申请日期 |
2003.03.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHIMANUKI, KAZUHIKO;HONMA, HIROYUKI;SAITO, NORIHIKO;YOKOYAMA, HIDEYUKI;SAITO, TAKANORI;NAKAO, KEN |
分类号 |
H01L21/02;H01L21/00;H01L21/324;H01L21/26;H01L21/687 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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