发明名称 Reflection plate for semiconductor heat treatment and manufacturing method thereof
摘要 <p>It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 µm, said at least one side 2a formed grooves 2c therein. </p>
申请公布号 EP1349200(A3) 申请公布日期 2009.01.07
申请号 EP20030006821 申请日期 2003.03.27
申请人 TOKYO ELECTRON LIMITED 发明人 SHIMANUKI, KAZUHIKO;HONMA, HIROYUKI;SAITO, NORIHIKO;YOKOYAMA, HIDEYUKI;SAITO, TAKANORI;NAKAO, KEN
分类号 H01L21/02;H01L21/00;H01L21/324;H01L21/26;H01L21/687 主分类号 H01L21/02
代理机构 代理人
主权项
地址