发明名称 |
Method and system for improving accuracy of critical dimension metrology |
摘要 |
A method for improving accuracy of optical critical dimension measurement of a substrate is provided. A process parameter that influences the refractive index and extinction coefficient of a thin film in the substrate is identified. A refractive index and extinction coefficient across a plurality of wavelengths as a function of the process parameter is identified. During the regression modeling of the optical critical dimension measurement, the refractive index and extinction coefficient across the plurality of wavelengths is adjusted through the function via the process parameter.
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申请公布号 |
US7580129(B2) |
申请公布日期 |
2009.08.25 |
申请号 |
US20070678413 |
申请日期 |
2007.02.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YU SHINN-SHENG;HUANG JACKY;KE CHIH-MING;GAU TSAI-SHENG |
分类号 |
G01B11/00 |
主分类号 |
G01B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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