| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type group III nitride semiconductor exhibiting a lower resistance p-type characteristic relative to a conventional p-type semiconductor composed of a p-type group III nitride semiconductor superlattice, and having a desired refractive index and a band gap. <P>SOLUTION: This p-type group III nitride semiconductor is a p-type group III nitride semiconductor 23 composed of a superlattice structure of an In<SB>0.04</SB>Al<SB>0.2</SB>Ga<SB>0.76</SB>N layer epitaxially grown on a laminate layer with a low-temperature GaN buffer layer 21 and a GaN layer 22 sequentially laminated on a sapphire substrate 20, and a p-type In<SB>0.1</SB>Al<SB>0.04</SB>Ga<SB>0.86</SB>N layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
