发明名称 Devices for utilizing symFETs for low-power information processing
摘要 A Boolean gate includes at least one symmetric tunneling field-effect transistor (SymFET) for low-power information processing. SymFETs are ideal for applications that demand low power and have moderate speed requirements, and demonstrate better dynamic energy efficiency than CMOS circuits. Negative differential resistance (NDR) behavior of SymFETs leads to hysteresis in inverters and buffers, and can be used to build simple Schmitt-triggers. Further, pseudo-SymFET loads may be utilized in circuits similar to all-n-type or dynamic logic. For example, latches and flip-flops as well as NAND, NOR, IMPLY, and MAJORITY gates may employ SymFETs. Such SymFET-based devices require fewer transistors than static CMOS-based designs.
申请公布号 US9362919(B1) 申请公布日期 2016.06.07
申请号 US201414579763 申请日期 2014.12.22
申请人 University of Notre Dame du Lac 发明人 Sedighi Behnam;Niemier Michael;Hu X. Sharon;Nahas Joseph J.
分类号 H03K19/195;H01L29/06;H01L29/16;H01L29/778;H01L29/08 主分类号 H03K19/195
代理机构 Greenberg Traurig, LLP 代理人 Greenberg Traurig, LLP
主权项 1. A Boolean logic device comprising: at least two SymFETs, with each of the at least two SymFETs including a top gate, a back gate, an insulator, a first graphene layer, a second graphene layer, a first oxide layer, and a second oxide layer, the insulator being disposed between the first and second graphene layers, the first and second graphene layers being disposed between the first and second oxide layers, the first and second oxide layers being disposed between the top and back gates, wherein conductivity of each of the at least two SymFETs is controlled at least in part by a first voltage supplied to the top gate and a second voltage supplied to the back gate; wherein the at least two SymFETs are configured in at least one of a parallel or series circuit arrangement such that input voltage is transformed to an output voltage.
地址 Notre Dame IN US