| 发明名称 | Etching composition and method for producing printed-wiring board using the same | ||
| 摘要 | The present invention can provide an etching composition for a chemical copper plating for the production of a printed-wiring board according to a semi-additive process, which comprises 0.2 to 5% by mass of hydrogen peroxide, 0.5 to 10% by mass of sulfuric acid, 0.001 to 0.3% by mass of phenylurea, 0.1 to 3 mass ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles, and wherein the ratio of the dissolution rate of the chemical copper plating (Y) to the dissolution rate of an electrolytic copper plating (X) at a liquid temperature of 30° C. (Y/X) is 4 to 7. | ||
| 申请公布号 | US9394616(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201414542913 | 申请日期 | 2014.11.17 |
| 申请人 | MITSUBISHI GAS CHEMICAL COMPANY, INC. | 发明人 | Takahashi Kenichi;Tashiro Norifumi |
| 分类号 | H01B13/00;C23F1/18;H05K3/06 | 主分类号 | H01B13/00 |
| 代理机构 | Greenblum & Bernstein, P.L.C. | 代理人 | Greenblum & Bernstein, P.L.C. |
| 主权项 | 1. An etching composition for a chemical copper plating for the production of a printed-wiring board according to a semi-additive process, which comprises 0.2 to 5% by mass of hydrogen peroxide, 0.5 to 10% by mass of sulfuric acid, 0.001 to 0.3% by mass of phenylurea, 0.1 to 3 mass ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles, and wherein the ratio of the dissolution rate of a chemical copper plating (Y) dissolved by the composition to the dissolution rate of an electrolytic copper plating (X) dissolved by the composition at a liquid temperature of 30° C. (Y/X) is 4 to 7. | ||
| 地址 | Tokyo JP | ||