Epitaxial Growth of Crystalline Material

摘要

A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.

主权项

1. A semiconductor structure comprising:
a trench having at least two sidewalls, an insulating layer formed on said at least two sidewalls, the trench having a bottom formed of a crystalline substrate; and an epitaxial crystalline material within the trench, the crystalline material being lattice-mismatched with the crystalline substrate and having a top surface with a root mean square surface roughness of 5 nm or less, the top surface of the crystalline material being a distinct surface from sidewalls of the crystalline material, the top surface of the crystalline material having a facet.