| 发明名称 |
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE |
| 摘要 |
As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using HVPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C. |
| 申请公布号 |
US2016265137(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201415025956 |
申请日期 |
2014.09.18 |
| 申请人 |
TAMURA CORPORATION ;NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY |
发明人 |
GOTO Ken;SASAKI Kohei;KOUKITU Akinori;KUMAGAI Yoshinao;MURAKAMI Hisashi |
| 分类号 |
C30B25/16;H01L29/04;H01L29/24;C30B29/16;H01L21/02 |
主分类号 |
C30B25/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for growing a β-Ga2O3-based single crystal film by HYPE method, comprising a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C. |
| 地址 |
Tokyo JP |
