发明名称 DYNAMIC MODULATION OF CROSS FLOW MANIFOLD DURING ELECTROPLATING
摘要 The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths and the edge flow element result in improved plating uniformity, especially at the periphery of the substrate.
申请公布号 US2016265132(A1) 申请公布日期 2016.09.15
申请号 US201615161081 申请日期 2016.05.20
申请人 Lam Research Corporation 发明人 Graham Gabriel Hay;Hiester Jacob Lee;Chua Lee Peng;Buckalew Bryan L.
分类号 C25D5/18;H01L21/288;C25D5/08;C25D7/12;C25D21/12;C25D17/00 主分类号 C25D5/18
代理机构 代理人
主权项 1. An electroplating apparatus comprising: (a) an electroplating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substrate, the substrate being substantially planar; (b) a substrate holder configured to hold the substrate such that a plating face of the substrate is separated from the anode during electroplating; (c) an ionically resistive element including a substrate-facing surface, wherein the ionically resistive element is at least coextensive with the plating face of the substrate during electroplating, the ionically resistive element adapted to provide ionic transport through the element during electroplating; (d) a cross flow manifold defined between the plating face of the substrate and the substrate-facing surface of the ionically resistive element, the cross flow manifold having an average height of about 15 mm or less; (e) an inlet to the cross flow manifold for introducing electrolyte to the cross flow manifold; (f) an outlet to the cross flow manifold for receiving electrolyte flowing in the cross flow manifold; and (g) a controller configured to modulate a height of the cross flow manifold during electroplating.
地址 Fremont CA US