SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

摘要

In the present invention, a MISFET has: a gate electrode formed on a semiconductor substrate with a gate insulation film interposed therebetween; and a source region and a drain region formed within the semiconductor substrate so as to sandwich the gate electrode. A first silicide layer is formed on the surfaces of the source region and drain region, and a second silicide layer is formed on the surface of the gate electrode. The first silicide layer and the second silicide layer are configured from a first metal and silicon, and include a second metal different from the first metal. The concentration of the second metal in the second silicide layer is lower than the concentration of the second metal in the first silicide layer.