Gallium nitride containing laser device configured on a patterned substrate

摘要

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

主权项

1. A method of fabricating a gallium and nitrogen containing laser diode device, the method comprising:
providing a gallium and nitrogen containing substrate material comprising a surface region, the surface region having a semi-polar crystal orientation; forming a plurality of recessed regions formed within the substrate material, each pair of adjacent recessed regions forming a mesa region therebetween, the mesa region having a width of less than 50 microns, the pair of adjacent recessed regions being configured to block a plurality of defects from migrating into the mesa region; forming an epitaxially formed gallium and nitrogen containing region formed overlying the mesa region, the epitaxially formed gallium and nitrogen containing region being substantially free from defects migrating from regions outside the pair of adjacent recessed regions to the mesa region; forming an active region formed overlying the mesa region; forming a p-type region overlying the active region; forming a laser stripe region overlying a portion of the mesa region, the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end; and forming a first facet provided on the first end of the laser stripe region and a second facet provided on the second end of the laser stripe region.