Semiconductor device and method of fabricating the same

摘要

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, a plug, a hydrogen blocking layer and an oxide semiconductor (OS) structure. The MOS transistor is disposed on the substrate, and the plug is disposed on the MOS transistor to electrically connect thereto. The hydrogen blocking layer is disposed only on sidewalls of the plug, wherein the hydrogen blocking layer includes a high-k dielectric layer. The OS structure is disposed on the substrate, wherein the OS structure includes an oxide semiconductor layer.

主权项

1. A semiconductor device, comprising:
a substrate; a metal oxide semiconductor (MOS) transistor disposed on the substrate; a plug disposed on the MOS transistor to electrically connect thereto; a hydrogen blocking layer disposed only on sidewalls of the plug, wherein the hydrogen blocking layer comprises a high-k dielectric material; and an oxide semiconductor (OS) structure disposed on the substrate, wherein the OS structure comprises an oxide semiconductor layer, two source/drain structures disposed on the oxide semiconductor layer, a first gate electrode disposed between the source/drain structures on the oxide semiconductor layer, and a second gate disposed below the oxide semiconductor layer, wherein the first gate electrode and the second gate electrode both overlap the oxide semiconductor layer.