| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device includes: a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; a first hard mask on the gate structure; and a second hard mask on the gate structure, wherein the first hard mask is adjacent to two sides of the second hard mask and the first hard mask and the first hard mask comprises silicon nitride. |
| 申请公布号 |
US9466564(B1) |
申请公布日期 |
2016.10.11 |
| 申请号 |
US201514692762 |
申请日期 |
2015.04.22 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan;Yang Chih-Wei;Huang Chih-Sen;Tung Yu-Cheng |
| 分类号 |
H01L29/66;H01L29/78;H01L29/788;H01L23/522;H01L21/033;H01L21/768;H01L21/311;H01L21/3105 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor device, comprising:
a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; a first hard mask on the gate structure; and a second hard mask on the gate structure, wherein the first hard mask is adjacent to two sides of the second hard mask and the first hard mask comprises silicon nitride. |
| 地址 |
Hsin-Chu TW |
