Manufacturing method of semiconductor device

摘要

A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in a first area and a second area of a substrate. A first density of the fin structures in the first area is lower than a second density of the fin structures in the second area. A gate dielectric layer is formed on the fin structures. An amorphous silicon layer is formed on the gate dielectric layer and the fin structures in the first area and the second area. Part of the amorphous silicon layer which is disposed in the first area is annealed to form a crystalline silicon layer by a laser. The crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area are polished.

主权项

1. A manufacturing method of a semiconductor device, comprising:
forming a plurality of fin structures in a first area and a second area of a substrate, wherein a first density of the fin structures in the first area is lower than a second density of the fin structures in the second area; forming a gate dielectric layer on the fin structures; forming an amorphous silicon layer on the gate dielectric layer and the fin structures in the first area and the second area; annealing part of the amorphous silicon layer which is disposed in the first area to form a crystalline silicon layer by a laser; and polishing the crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area.