发明名称 |
METHOD FOR DETECTING OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A method for detecting an overlay error includes: forming a first overlay key including a plurality of spaced apart first target patterns having a first pitch on a first layer of a substrate; forming a second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch on a second layer of the substrate below the first layer; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern. |
申请公布号 |
US2016300767(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514978916 |
申请日期 |
2015.12.22 |
申请人 |
Ko Kang-Woong;Jeon Hyoung-Jo;Horie Masahiro;Song Gil-Woo |
发明人 |
Ko Kang-Woong;Jeon Hyoung-Jo;Horie Masahiro;Song Gil-Woo |
分类号 |
H01L21/66;G01B11/14;G01B11/27 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for detecting an overlay error, the method comprising:
forming a first overlay key on a first layer of a substrate, the first overlay key including a plurality of spaced apart first target patterns having a first pitch; forming a second overlay key on a second layer of the substrate above or below the first layer, the second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern. |
地址 |
Seoul KR |